Shifting Phase in a Resonator Device for Magnetic Resonance

ABSTRACT

In some aspects, a resonator device includes a dielectric substrate, a ground plane on a first side of the substrate, and conductors on a second, opposite side of the substrate. The conductors include first and second resonators and two baluns. Each balun includes a feed, a first branch and a second branch. The feed is connected to the first and second branches, and the first and second branches are capacitively coupled to the respective first and second resonators. The first branch includes a delay line configured to produce a phase shift relative to the second branch. The resonator device includes a sample region configured to support a magnetic resonance sample between the first and second resonators.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claim priority to U.S. Provisional Application No.62/196,166, filed on Jul. 23, 2015, which is hereby incorporated byreference.

BACKGROUND

The following description relates to a resonator device for magneticresonance applications.

Magnetic resonance systems are used to study various types of samplesand phenomena. In some magnetic resonance applications, the spins in asample are polarized by a static, external magnetic field, and aresonator manipulates the spins by producing a magnetic field at afrequency near the spins' resonance frequencies. Resonators can be used,for example, in electron spin resonance (ESR), nuclear magneticresonance (NMR), magnetic resonance imaging (MRI) and otherapplications.

DESCRIPTION OF DRAWINGS

FIG. 1A is a schematic diagram showing aspects of an example resonatordevice.

FIG. 1B is a schematic diagram showing additional aspects of the exampleresonator device 100 represented in FIG. 1A.

FIG. 2 is a schematic diagram showing aspects of another exampleresonator device.

FIG. 3 is a schematic diagram showing aspects of another exampleresonator device.

FIG. 4 is a schematic diagram showing aspects of another exampleresonator device.

FIG. 5 is a schematic diagram showing aspects of another exampleresonator device.

FIGS. 6 and 7 are schematic diagrams showing simulated magnetic fieldsproduced in a sample region by the example resonator device 300 shown inFIG. 3.

FIG. 8 is a schematic diagram showing simulated magnetic fields producedin a substrate by the example resonator device 300 shown in FIG. 3.

FIG. 9 is a schematic diagram showing an example circuit model foranalyzing a resonator device.

DETAILED DESCRIPTION

In some aspects of what is described here, a resonator device includes abalun. The resonator device can be, for example, a resonator device forelectron spin resonance (ESR) applications, nuclear magnetic resonance(NMR) applications, magnetic resonance imaging (MRI) applications oranother application. In some examples, a resonator device includes tworesonators that are parallel to each other and fed differentially bybaluns configured to operate at the resonant frequency of theresonators. In the examples shown in FIGS. 1A, 1B, 2, 3, 4 and 5, theresonators are half-wavelength transmission line resonators that areidentical in their design; and the baluns are narrowband baluns thateach includes a microstrip line feed, two branches, a delay line in oneof the branches and transmission lines at the ends of the branches.Additional or different resonators, baluns or other components may beincluded in some cases.

In some implementations, a resonator device having a high quality factorcan produce a magnetic field that has a low mode volume. The resonatordevice can be used for magnetic applications to produce a microwave orradio frequency magnetic field that is substantially homogeneous acrossthe sample in all three spatial dimensions. In some cases, the resonatordevice is less sensitive to DC (static) magnetic fields aligned alongthe direction of current flow in the conductors of the resonator device.For instance, the arrangement of conductors in the resonator device canreduce vortex losses.

FIG. 1A is a schematic diagram showing aspects of an example resonatordevice 100. FIG. 1B is a schematic diagram showing additional aspects ofthe example resonator device 100 represented in FIG. 1A. The exampleresonator device 100 represented in FIGS. 1A and 1B includes adielectric substrate 160, a ground plane 170 on a first side of thesubstrate, and conductors 150 on a second, opposite side of thesubstrate. The example resonator device 100 also includes a sampleregion 105 configured to support a magnetic resonance sample 110.

FIG. 1B provides a side view of the resonator device 100, showing theconductors 150, the dielectric substrate 160 and the ground plane 170.FIG. 1A provides a top view of the conductors 150. The coordinate axes120A, 120B in the respective figures show the relative orientation ofeach view. A resonator device may include additional or differentfeatures, and the components of a resonator device may be arranged asshown or in another manner.

In some implementations, the dielectric substrate 160 includes a cavityor recess in the sample region 105, and the sample 110 can be positionedin the cavity or recess. The sample 110 can be, for example, a threedimensional sample containing a spin ensemble that is distributed overthree spatial dimensions. In some examples, the sample 110 has athickness (in the y-direction) of 100 micrometers (100 μm) and sits in arecess having a depth of 50 micrometer (50 μm) in the substrate 160.Another size sample may be used. The resonator device 100 may beconfigured to produce a substantially uniform microwave magnetic fieldover the full three-dimensional spatial extent of the sample 110. Insome examples, the resonator device 100 produces a microwave magneticfield that is substantially uniform over a region that is 100micrometers (100 μm) thick in the y-direction.

In some implementations, the dielectric substrate 160 is made ofdielectric material such as, for example, sapphire, silicon, MgO₂,LaAlO₃, or another type of non-magnetic dielectric crystalline material.In some implementations, the conducting material on the dielectricsubstrate (e.g., the ground plane 170, the conductors 150, etc.) can bemade of non-superconducting material (e.g., gold, copper, etc.),superconducting material (e.g., niobium, niobium titanium, niobiumnitride, aluminum, yttrium barium copper oxide (aka, “YBCO”), magnesiumdiboride) or a combination of them. The conducting materials can bedeposited on the substrate 160 by standard deposition processes. Thesubstrate 160 can be etched or otherwise conditioned based on standardfabrication processes.

In some implementations, the ground plane 170 and the conductors 150 canbe implemented as thin films on opposite sides of the dielectricsubstrate 160. In the example shown in FIG. 1B, the ground plane 170 andthe conductors 150 define a microstrip transmission line structure.Generally, a microstrip transmission line structure can include anyconducting material (non-superconducting material or superconductingmaterial) on a first surface of a dielectric substrate separated from aground plane on the opposite surface of the dielectric substrate. Insome cases, the example resonator device 100 can be housed in aconductive enclosure (e.g., a copper box, or another type of conductiveenclosure) of appropriate dimensions during operation.

As shown in FIG. 1A, the conductors 150 of the example resonator device100 include a first resonator 115A, a second resonator 115B, a firstbalun 102A and a second balun 102B. The dielectric substrate 160 cansupport a magnetic resonance sample 110 in the sample region 105,between the first and second resonators 115A, 115B. In someimplementations, the conductors 150 also include strips that residebetween the first and second resonators about the sample region 105. Forexample, the strips can be implemented as elongate conductors thatextend parallel to the resonators 115A, 115B on either side of thesample region 105. Examples are shown in FIGS. 3, 4 and 5.

In the example shown, the resonators 115A, 115B are implemented asconductor strips supported on the dielectric substrate 160. The exampleresonators 115A, 115B in FIG. 1A are parallel, elongate conductors thatextend between the baluns 102A, 102B. The resonators 115A, 115B areconfigured to resonate at a resonance frequency; the resonance frequencyof a resonator can be determined at least in part by its length. In theexample shown in FIG. 1A, the resonators 115A, 115B are half-wavelengthmicrostrip line resonators; and the length 133 of each resonator isλ₀/2, where λ₀ is the wavelength corresponding to the resonancefrequency at which the resonators 115A, 115B operate.

In the example shown, the first and second baluns 102A, 102B areimplemented as conductors having similar structures; the first andsecond baluns 102A, 102B have identical designs and oppositeorientations on the dielectric substrate 160. The first and secondbaluns 102A, 102B reside at opposite ends of the elongate resonators115A, 115B; the first balun 102A is coupled to the resonators 115A, 115Bacross the gaps at a first end of the resonators 115A, 115B, and thesecond balun 102B is coupled to the resonators 115A, 115B across thegaps at a second, opposite end of the resonators 115A, 115B.

The first balun 102A includes a feed 111A, two branches connected to thefeed 111A, and a power splitter section between the feed 111A and thetwo branches. The branches of the first balun 102A are capacitivelycoupled to the respective first and second resonators 115A, 115B. Afirst branch extending from the feed 111A includes a first delay line113A, and a second branch extending from the feed 111A includes aconducting strip 114A. The conducting strip 114A extends from the feed111A to the gap between the branch and the second resonator 115B. Thedelay line 113A in the first branch is configured to produce a phaseshift relative to the conducting strip 114A in the second branch.

Similar to the first balun 102A, the second balun 102B includes a feed111B, two branches connected to the feed 111B, and a power splittersection between the feed 111B and the two branches. The branches of thesecond balun 102B are capacitively coupled to the respective first andsecond resonators 115A, 115B. A first branch extending from the feed111B includes a second delay line 113B, and a second branch extendingfrom the feed 111B includes a conducting strip 114B. The conductingstrip 114B extends from the feed 111B to the gap between the branch andthe second resonator 115B. The delay line 113B in the first branch isconfigured to produce a phase shift relative to the conducting strip114B in the second branch.

As shown in FIG. 1A, the branches of the second balun 102B have the samestructure and opposite orientation of the branches of the first balun102A. In some examples, the feed of each balun has a firstcharacteristic impedance, and the branches connected to the feed haverespective characteristic impedances that are greater than the firstcharacteristic impedance. For instance, the branches of the balun mayhave twice the characteristic impedance of the feed. In the exampleshown in FIG. 1A, the feeds 111A, 111B each have a characteristicimpedance of fifty ohms (50Ω), and the branches extending from the feeds111A, 111B each have a characteristic impedance of one hundred ohms(100Ω), which can maximize the power transferred to the resonators 115A,115B. The feeds and branches may have other characteristic impedancevalues.

As shown in FIG. 1A, the first resonator 115A extends between the branchof the first balun 102A that includes the first delay line 113A and thebranch of the second balun 102B that includes the second delay line113B. The second resonator 115B extends between the other branches (thebranches that do not include delay lines) of the first and second baluns102A, 102B.

In the example shown in FIG. 1A, the delay lines 113A, 113B includeconducting strips formed on the surface of the dielectric substrate 160.The first delay line 113A, for example, is a conducting strip thatextends between first and second ends of the delay line 113A. The branchthat includes the first delay line 113A has a first portion 131connected between the feed 111A and the first end of the delay line113A, and a second portion 132 connected to the second end of the delayline 113A. The second portion 132 of the branch extends from the secondend of the delay line 113A to the gap between the branch and the firstresonator 115A.

In the example shown in FIG. 1A, the delay line 113A includes threedelay line portions 134, 135, 136. The first delay line portion 135extends (in the x-direction) from the first end of the delay line 113A,perpendicular to the first portion 131 of the first branch. The seconddelay line portion 136 extends (in the x-direction) from the second endof the delay line, perpendicular to the second portion 132 of the firstbranch. The third delay line portion 134 extends (in the z-direction)between the first and second delay line portions 135, 136. The delayline 113A includes two turns between the first and second delay lineportions 135, 136. In particular, the delay line 113A includes a firstturn where the first delay line portion 135 meets the third delay lineportion 134, and a second turn where the second delay line portion 136meets the third delay line portion 134. The delay line 113B in thesecond balun 102B has the same structure as the delay line 113A in thefirst balun 102A. The delay lines 113A, 113B can have another shape; anexample is shown in FIG. 2. In some cases, the turns can be roundedturns (e.g., having a radius) or angled turns (e.g., at right angles, asshown), or the turns can have another shape.

In some implementations, a delay line in a branch of a balun can beconfigured to produce a 180-degree phase shift, relative to anotherbranch in the balun. The example delay lines 113A, 113B shown in FIG. 1Aare configured to produce a 180-degree phase shift in an electromagneticsignal at the resonance frequency of the first and second resonators115A, 115B; the 180-degree phase shift produced by the delay lines 113A,113B is relative to the phase of the same signal in the associatedconducting strip 114A, 114B. For instance, the length of the first delayline 113A shown in FIG. 1A, which is the total combined length of thethree delay portions 134, 135, 136, can be specified to produce the180-degree phase shift. In the example shown in FIG. 1A, the delay lines113A, 113B each have a total length of λ₀/2, where λ₀ is the wavelengthcorresponding to the resonance frequency at which the resonators 115A,115B operate. In some cases, the phase shift produced by the baluns102A, 102B increases the strength of the magnetic field produced in thesample region 105. For example, the microwave field strength can beseveral times stronger for the same current in some cases.

The example resonator device 100 shown in FIGS. 1A and 1B is configuredfor installation in a magnetic resonance system that generates aprincipal magnetic field B₀. The principal magnetic field B₀ can be astatic magnetic field that polarizes a spin ensemble in the sample 110.The resonator device 100 can be oriented in the principal magnetic fieldB₀ as represented by the arrow 108 in FIG. 1A, such that the first andsecond resonators 115A, 115B extend parallel to the principal magneticfield B₀.

In some aspects of operation, the sample 110 is positioned on thesubstrate 160 in the sample region 105 between the resonators 115A,115B. The sample 110 can be, for example, a magnetic resonance samplethat includes an ensemble of electron spins or nuclear spins. Theprincipal magnetic field B₀ can polarize the spins in the sample 110.The spins have a resonance frequency (or spin precession frequency) inthe principal magnetic field B₀. The resonance frequency is typically inthe MHz or GHz range (radio or microwave frequencies) in magneticresonance applications. In operation, the resonators 115A, 115B are feddifferentially by the baluns 102A, 102B and generate a microwave fieldat their resonance frequency. The time-varying field can be tuned to theresonance frequency of the spins in the sample 110, for instance, tomanipulate the spins.

In some aspects of operation, the microwave signal is fed into thebaluns 102A, 102B at their respective feeds 111A, 111B, and themicrowave signal is divided equally into the two transmission linesformed by the branches in each of baluns 102A, 102B. The baluns 102A,102B are each configured to convert the microwave signal to a pair ofbalanced microwave signals with 180 degrees phase difference at the endsof the transmission lines. One of the transmission lines in each of thebaluns 102A, 102B includes the delay line, and the microwave signalthrough the delay line traverses a longer electrical path than themicrowave signal through the other transmission line (i.e., thetransmission line without the delay line). Relative to the transmissionline without the delay line, the transmission line with the delay lineprovides 180 degrees more electrical length for signals at the resonancefrequency of the resonators 115A, 115B. The relative difference inelectrical length produces a relative phase shift in the signals at theoutput of the baluns 102A, 102B. The relative phase shift produces thepair of balanced signals that are communicated from the baluns 102A,102B to the resonators 115A, 115B.

In some aspects of operation, the baluns 102A, 102B drive the tworesonators 115A, 115B through the capacitive gap at the ends of theresonators 115A, 115B. The baluns 102A, 102B are symmetrically arrangedon opposite sides of the resonators 115A, 115B. In the example shown,the symmetric two-port arrangement satisfies the impedance matchingcondition over a large range of the gap size which is used for qualityfactor adjustment. Each of the delay lines 113A, 113B can apply a180-degree phase shift to the microwave signal that is fed into thefirst resonator 115A, relative to the phase of the microwave signal thatis fed into the second resonator 115B. As such, the phase shift producedby the delay line 113A compensates for the phase shift produced by theother delay line 113B.

In some aspects of operation, the resonators 115A, 115B aresimultaneously excited at a single resonance frequency corresponding tothe odd mode. The resonators can be excited differentially and carry thesame current distributions in opposite directions. In such instances,the magnetic fields generated by the two resonators 115A, 115Bconstructively add in the sample region 105. When operated ashalf-wavelength resonators, the current over the length 133 of theresonators 115A, 115B has a cosine distribution. In such instances, themagnetic field generated by the resonators 115A, 115B is at a maximum inthe sample region 105 where the sample 110 resides. In the exampleshown, the direction of the magnetic field generated by the resonators115A, 115B is oriented in the y-direction (perpendicular to thexz-plane). Thus, the spin ensemble in the sample 110 experiencesmicrowave-frequency magnetic field that is primarily oriented in they-direction, which is perpendicular to the principal magnetic field B₀(oriented in the z-direction).

In some instances, the example resonator device 100 can be operated toproduce a time-varying magnetic field in the sample region 105. Forexample, the resonator device 100 may produce a microwave frequencyfield configured to manipulate spins in the sample 110. In someinstances, the example resonator device 100 can be operated to produce adetection signal. The detection signal can be produced by a voltageinduced across the resonators 115A, 115B by precession of spins in thesample 110. For example, the spins can inductively couple to theresonators 115A, 115B as the spins precess in the principal magneticfield B₀. The resonators 115A, 115B can transfer the detection signal tothe feeds 111A, 111B. The feeds 111A, 111B can transfer the detectionsignal to an external system, where it can be detected, recorded, andfurther processed.

FIG. 2 is a schematic diagram showing aspects of another exampleresonator device 200. The example resonator device 200 includes balunshaving another configuration. FIG. 2 provides a top view of theconductors on one side of a dielectric substrate. The conductors shownin FIG. 2 can be implemented as an alternative to the example conductors150 shown in FIGS. 1A and 1B. For example, the example resonator device200 can includes a dielectric substrate, a ground plane on a first sideof the substrate, and the conductors shown in FIG. 2 on a second,opposite side of the substrate.

In the example shown in FIG. 2, the design of the conductors isidentical to the design of the conductors 150 shown in FIG. 1A, exceptthat the delay lines 113C, 113D in FIG. 2 have a different structurethan the delay lines 113A, 113B shown in FIG. 1A. As shown in FIG. 2,the conductors of the example resonator device 200 include the firstresonator 115A, the second resonator 115B, a first balun 102C and asecond balun 102D. The first balun 102C in FIG. 2 includes the delayline 113C but otherwise is the same as the first balun 102A in FIG. 1A;similarly, the second balun 102D in FIG. 2 includes the delay line 113Dbut otherwise is the same as the second balun 102B in FIG. 1A.

In the example shown in FIG. 2, the delay lines 113C, 113D includeconducting strips formed on the surface of a substrate. The first delayline 113C extends between first and second ends of the delay line 113C,and the first and second ends of the delay line 113C are connected tothe respective first and second portions 131, 132 of the first branchextending from the feed 111A.

The example delay line 113C shown in FIG. 2 includes five delay lineportions 140, 141, 142, 143, 144. The first delay line portion 140extends (in the x-direction) from the first end of the delay line 113C,perpendicular to the first portion 131 of the first branch. The seconddelay line portion 144 extends (in the x-direction) from the second endof the delay line, perpendicular to the second portion 132 of the firstbranch. The third delay line portion 141 extends (in the z-direction)from the first delay line portion 140, perpendicular to the first delayline portion 140. The fourth delay line portion 143 extends (in thez-direction) from the second delay line portion 144, perpendicular tothe second delay line portion 144. The delay line 113C includes fourturns between the first and second delay line portions 140, 144. Inparticular, the delay line 113C includes a first turn where the firstdelay line portion 140 meets the third delay line portion 141, a secondturn where the second delay line portion 144 meets the fourth delay lineportion 143, a third turn where the third delay line portion 141 meetsthe fifth delay line portion 142, and a fourth turn where the fourthdelay line portion 143 meets the fifth delay line portion 142. The delayline 113D in the second balun 102D has the same structure (and oppositeorientation) as the delay line 113C in the first balun 102C. The delaylines 113C, 113D can have another shape. In some cases, the turns can berounded turns (e.g., having a radius) or angled turns (e.g., at rightangles, as shown), or the turns can have another shape.

In the example resonator device 200 shown in FIG. 2, the third andfourth delay line portions 141, 143 extend in the z-direction, parallelto the first and second resonators 115A, 115B. In this example, theresonators 115A, 115B and the third and fourth delay line portions 141,143 are aligned with the principal magnetic field B₀, which is orientedin the z-direction as shown in FIG. 2. In some instances, the principalmagnetic field B₀ can produce vortex motion loss in the conductors thatare oriented to conduct current perpendicular to the principal magneticfield B₀. Therefore, by orienting the resonators 115A, 115B and portionsof the delay lines in a direction that is parallel to the principalmagnetic field B₀, vortex motion loss may be reduced or suppressed insome cases. Losses may be reduced by other configurations that reducethe length of conductors that conduct current perpendicular to theprincipal magnetic field B₀.

The example delay lines 113C, 113D shown in FIG. 2 are configured toproduce a 180-degree phase shift in an electromagnetic signal at theresonance frequency of the first and second resonators 115A, 115B. Forinstance, the length of the delay line 113C, which is the total combinedlength of the five delay line portions 140, 141, 142, 143, 144, can bespecified to produce the 180-degree phase shift; the 180-degree phaseshift produced by the delay lines 113C, 113D is relative to the phase ofthe same signal in the associated conducting strip 114A, 114B. In someinstances, the example resonator device 200 shown in FIG. 2 may operateas described with respect to the example resonator device 100 shown inFIGS. 1A and 1B.

FIG. 3 is a schematic diagram showing aspects of another exampleresonator device 300. The example resonator device 300 includesconductor strips 116A, 116B about the sample region 105 between theresonators 115A, 115B. The conductor strips 116A, 116B are elongateconductors that extend in a direction (the z-direction, in the exampleshown) that is parallel to the resonators 115A, 115B and parallel to theprincipal magnetic field B₀. Each of the conductor strips 116A, 116B hasa first end near the sample region 105 and a second end near one of therespective gaps between the resonators 115A, 115B and the baluns 102A,102B.

FIG. 3 provides a top view of the conductors on one side of a dielectricsubstrate. The conductors shown in FIG. 3 can be implemented as analternative to the example conductors 150 shown in FIGS. 1A and 1B. Forexample, the example resonator device 300 can includes a dielectricsubstrate, a ground plane on a first side of the substrate, and theconductors shown in FIG. 3 on a second, opposite side of the substrate.The conductor strips 116A, 116B can increase concentration of themicrowave magnetic field in the sample region 105, and thereby improveoperation of the resonator device in some instances.

In some systems, the perpendicular component of an RF or microwavemagnetic field impinging a perfect conductor is zero. To reduce the modevolume of the resonators 115A, 115B, two conductor strips 116A, 116B maybe positioned on the sides of the sample 110. In the example shown inFIG. 3, there are conductors on all sides of the sample 110. Thetangential component of the magnetic field can generate surface currentson the conductor strips 116A, 116B, for example, along the edges of theconductor strips 116A, 116B. When the conductor strips 116A, 116B aremade of superconducting material, the edges of the conductor strips116A, 116B that are perpendicular to the principal magnetic field B₀(e.g., the edges at the ends, which are oriented in the x-direction) cangive rise to the vortex motion loss which can reduce the quality factorof the resonator device. In the example shown in FIG. 3, vortex motionloss can be proportional to the magnitude and length of the x-componentof the current in the conductor strips 116A, 116B. To reduce such vortexmotion loss, the conductor strips 116A, 116B can be divided into smallersections; examples are shown in FIGS. 4 and 5.

FIG. 4 is a schematic diagram showing aspects of another exampleresonator device 400. The example resonator device 400 shown in FIG. 4includes four conductor strips 117A, 117B, 117C, 117D about the sampleregion 105 between the resonators 115A, 115B. The four conductor strips117A, 117B, 117C, 117D shown in FIG. 4 are narrower than the twoconductor strips 116A, 116B shown in FIG. 3. The narrower width of theconductor strips 117A, 117B, 117C, 117D may reduce vortex motion loss insome cases.

FIG. 5 is a schematic diagram showing aspects of another exampleresonator device 500. The example resonator device 500 shown in FIG. 5includes six conductor strips 118A, 118B, 118C, 118D, 118E, 118F aboutthe sample region 105 between the resonators 115A, 115B. The sixconductor strips 118A, 118B, 118C, 118D, 118E, 118F shown in FIG. 5 arenarrower than the four conductor strips 117A, 117B, 117C, 117D shown inFIG. 4. The narrower width of the conductor strips 118A, 118B, 118C,118D, 118E, 118F may reduce vortex motion loss in some cases.

FIGS. 6-8 are schematic diagrams showing aspects of magnetic fields thatmay be generated by operation of the example resonator device 300 shownin FIG. 3. The diagrams shown in FIGS. 6-8 are generated by computersimulations, using ANSYS® HFSS software (available from ANSYS, Inc. ofCanonsburg, Pa.). In the simulations, the resonators 115A, 115B aredriven by a 1 Watt microwave source at a frequency of approximately 10GigaHertz (GHz). The example resonator device 300 may operate at anotherfrequency. In the simulations, the feed has a width of 358 micrometers(μm), the branches each have a width of 524 μm, the gap between thebranches and the resonators is 150 μm, the resonators each have a widthof 521 μm and a length of 6195 μm, the resonance frequency of theresonators is 10 GHz, the spacing between the two resonators is 300 μm,and the width of the conductor strips between the resonators is 168 μm.

FIGS. 6 and 7 are schematic diagrams showing simulated magnetic fieldsproduced in the sample region 105 when a 1 Watt microwave voltage sourceis applied to the resonator device. FIG. 6 provides a perspective viewof the vector magnetic field in the plane of the conductors. In FIG. 6,a diagram 600 shows the location and spatial direction of the simulatedmagnetic field 605, and a legend 610 shows the field strengthsrepresented in the diagram 600. FIG. 7 provides a top view of themagnetic field in the plane of the conductors. In FIG. 7, a diagram 700shows the location and spatial distribution of the simulated magneticfield 705, and a legend 710 shows the field strengths represented in thediagram 700.

FIG. 8 is a schematic diagram showing simulated magnetic fields producedover the dielectric substrate. FIG. 8 provides a perspective view of themagnetic field in and below the plane of the conductors. In FIG. 8, adiagram 800 shows the location and spatial distribution of the simulatedmagnetic field 805, and a legend 810 shows the field strengthsrepresented in the diagram 800.

FIG. 9 is a schematic diagram showing an example transmission line model900 for analyzing a resonator device. In some cases, the circuit model900 may be used to analyze the example resonator devices shown in FIG.1A, 1B, 2, 3, 4, 5 or another resonator device. The example circuitmodel 900 includes a source 902, two baluns 904 and 912, two couplingcapacitors 906 and 910, coupled resonators 908 and a load 914. Thebaluns 904, 912 in FIG. 9 represent a model for the two baluns of theresonator device; the coupled resonators 908 in FIG. 9 represent a modelfor the two resonators of the resonator device; and the couplingcapacitors 906, 910 represent the capacitive coupling between theresonators and the branches of the respective baluns. The balun 904 ismodeled between the source 902 and the coupling capacitor 906; thecoupling capacitor 906 is modeled between the balun 904 and the coupledresonators 908; the coupled resonators 908 are modeled between thecoupling capacitor 906 and the coupling capacitor 910; the couplingcapacitor 910 is modeled between the coupled resonators 908 and thebalun 912; and the balun 912 is modeled between the coupling capacitor906 and the load 914.

The source 902 includes a microwave voltage source V_(s) coupled betweenground and a source resistance R₅. The source 902 is shown with acurrent I_(in) and impedance Z_(in). The baluns 904, 910 each include a180 degree phase shift in one of the lines. Each of the baluns 904, 910is shown with an impedance Z₀, a current I₁, and a coupling coefficientγ₀. The coupled resonators 908 each include 180 degree phase shift inboth of the lines. Each of the coupled resonators 908 is shown with animpedance Z_(0o), a current I₀, and a coupling coefficient γ_(0o). Thecoupling capacitors 906, 910 each include capacitances C_(s). The load914 includes a load resistance R_(L) connected to ground.

In a general aspect of what is described, a resonator device includes adelay line.

In a first example, a resonator device includes a dielectric substrate;a ground plane on a first side of the substrate; conductors on a second,opposite side of the substrate; and a sample region configured tosupport a magnetic resonance sample between the first and secondresonators. The conductors include first and second resonators and twobaluns. The baluns each include a respective feed, a first branch and asecond branch. The feed of each balun is connected to the first andsecond branches of the balun; and the first and second branches of eachbalun are capacitively coupled to the respective first and secondresonators. The first branch of each balun includes a delay lineconfigured to produce a phase shift relative to the second branch of thebalun.

Implementations of the first example may include one or more of thefollowing features. The delay line can extend between first and secondends of the delay line. The first branch can include a first portionconnected between the feed and the first end of the delay line, and asecond portion connected to the second end of the delay line, extendingto a gap between the first branch and the first resonator. The secondbranch can extend from the feed to a gap between the second branch andthe second resonator. The delay line can include a first delay lineportion that extends from the first end of the delay line, perpendicularto the first portion of the first branch; a second delay line portionthat extends from the second end of the delay line, perpendicular to thesecond portion of the first branch; and one or more turns between thefirst and second delay line portions. The delay line can include a thirddelay line portion that extends from the first delay line portion,perpendicular to the first delay line portion; a fourth delay lineportion that extends from the second delay line portion, perpendicularto the second delay line portion; and one or more turns between thethird and fourth delay line portions. The first and second resonatorscan include first and second elongate resonator strips, and the thirdand fourth delay line portions can extend in a direction parallel to thefirst and second resonators.

Implementations of the first example may include one or more of thefollowing features. The delay line can be configured to produce a180-degree phase shift, relative to the third branch, in anelectromagnetic signal at a resonance frequency of the first and secondresonators. The feed can have a first characteristic impedance, and thefirst and second branches can have respective characteristic impedancesgreater than the first characteristic impedance. The first and secondbranches can have twice the characteristic impedance of the feed. Theconductors can be made of superconducting material. The first and secondresonators can be half-wavelength resonators. The conductors on thesecond side of the substrate can include strips about the sample region,between the first and second resonators.

Implementations of the first example may include one or more of thefollowing features. The resonator device can be configured forinstallation in a magnetic resonance system that generates a principalmagnetic field. The first and second resonators can include first andsecond elongate resonator strips that extend parallel to the principalmagnetic field.

In a second example, a resonator device includes a first resonator, asecond resonator, a sample region configured to support a magneticresonance sample between the first and second resonators, and means fordelivering microwave signals to the first and second resonators. Themicrowave signals delivered to the first resonator have a phase that isshifted, relative to the microwave signals delivered to the secondresonator, by the means for delivering microwave signals.

Implementations of the second example may include one or more of thefollowing features. The means for delivering microwave signals caninclude a balun. The balun can include a feed, a first branch and asecond branch. The feed can be connected to the first and secondbranches. The first and second branches can be capacitively coupled tothe respective first and second resonators. The first branch can includea delay line configured to produce the phase shift. The means fordelivering microwave signals can include a first balun comprising afirst pair of branches capacitively coupled to the respective first andsecond resonators; and a second balun comprising a second pair ofbranches capacitively coupled to the respective first and secondresonators. The first and second resonators and the first and secondbaluns can include superconducting material on a dielectric substrate.The resonator device can include the dielectric substrate and a groundplane. The dielectric substrate can support the first and secondresonators and the means for delivering microwave signals.

While this specification contains many details, these should not beunderstood as limitations on the scope of what may be claimed, butrather as descriptions of features specific to particular examples.Certain features that are described in this specification or shown inthe drawings in the context of separate implementations can also becombined. Conversely, various features that are described or shown inthe context of a single implementation can also be implemented inmultiple embodiments separately or in any suitable subcombination.

Similarly, while operations are depicted in the drawings in a particularorder, this should not be understood as requiring that such operationsbe performed in the particular order shown or in sequential order, orthat all illustrated operations be performed, to achieve desirableresults. In certain circumstances, multitasking and parallel processingmay be advantageous. Moreover, the separation of various systemcomponents in the implementations described above should not beunderstood as requiring such separation in all implementations, and itshould be understood that the described program components and systemscan generally be integrated together in a single product or packagedinto multiple products.

A number of embodiments have been described. Nevertheless, it will beunderstood that various modifications can be made. Accordingly, otherembodiments are within the scope of the following claims.

1-12. (canceled)
 13. A resonator device comprising: a first resonator; asecond resonator; a sample region configured to support a magneticresonance sample between the first and second resonators; and means fordelivering microwave signals to the first and second resonators, whereinthe microwave signals delivered to the first resonator comprise a phaseshift relative to the microwave signals delivered to the secondresonator.
 14. The resonator device of claim 13, wherein the means fordelivering microwave signals comprises a balun comprising a feed, afirst branch and a second branch, the feed connected to the first andsecond branches, the first and second branches capacitively coupled tothe respective first and second resonators, the first branch comprisinga delay line configured to produce the phase shift.
 15. The resonatordevice of claim 13, wherein the means for delivering microwave signalscomprises: a first balun comprising a first pair of branchescapacitively coupled to the respective first and second resonators; anda second balun comprising a second pair of branches capacitively coupledto the respective first and second resonators.
 16. (canceled)
 17. Theresonator device of claim 13, comprising a dielectric substrate and aground plane.
 18. The resonator device of claim 15, wherein the firstand second pairs of branches include respective delay lines that areconfigured to produce the phase shift.
 19. The resonator device of claim18, wherein the delay lines are configured to produce a 180-degree phaseshift between the microwave signals delivered to the first resonator andthe microwave signals delivered to the second resonator.
 20. Theresonator device of claim 17, wherein first and second resonatorscomprise first and second elongate resonator strips on the dielectricsubstrate.
 21. The resonator device of claim 20, wherein the resonatordevice is configured for installation in a magnetic resonance systemthat generates a principal magnetic field, and the first and secondresonators comprise first and second elongate resonator strips thatextend parallel to the principal magnetic field.
 22. The resonatordevice of claim 13, wherein the first and second resonators arehalf-wavelength resonators.
 23. The resonator device of claim 13,comprising a plurality of strips about the sample region between thefirst and second resonators.